The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Mar. 20, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kuo-Wei Chang, Cupertino, CA (US);

Paolo Fantini, Vimercate, IT;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); C03C 3/00 (2006.01); C03C 3/04 (2006.01); C03C 3/062 (2006.01); C03C 3/32 (2006.01);
U.S. Cl.
CPC ...
H01L 45/143 (2013.01); C03C 3/00 (2013.01); C03C 3/04 (2013.01); C03C 3/062 (2013.01); C03C 3/32 (2013.01); C03C 3/321 (2013.01); H01L 27/2409 (2013.01); H01L 45/00 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/14 (2013.01); H01L 45/141 (2013.01);
Abstract

Embodiments of the present disclosure describe chalcogenide glass compositions and chalcogenide switch devices (CSD.) The compositions generally may include 3% to 15%, silicon, 8% to 16% germanium in, greater than 45% selenium, and 20% to 35% arsenic, by weight. The amount of silicon and germanium in a composition generally may include more than 10% by weight. CSDs may include various compositions of chalcogenide glass, and a plurality of them may be used in a memory device, such as die with a memory component, and may be used in various electronic components and systems. Other embodiments may be described and/or claimed.


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