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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379312 B1

PDFFull Text
Date of Patent:
Jun. 28, 2016

Filed:

Dec. 14, 2010

Magnetoresistive effect element and magnetic random access memory using the same

Applicants:

Tadahiko Sugibayashi, Tokyo, JP;

Eiji Kariyada, Tokyo, JP;

Kaoru Mori, Tokyo, JP;

Norikazu Ohshima, Tokyo, JP;

Shunsuke Fukami, Tokyo, JP;

Tetsuhiro Suzuki, Tokyo, JP;

Hironobu Tanigawa, Tokyo, JP;

Sadahiko Miura, Tokyo, JP;

Nobuyuki Ishiwata, Tokyo, JP;

Inventors:

Tadahiko Sugibayashi, Tokyo, JP;

Eiji Kariyada, Tokyo, JP;

Kaoru Mori, Tokyo, JP;

Norikazu Ohshima, Tokyo, JP;

Shunsuke Fukami, Tokyo, JP;

Tetsuhiro Suzuki, Tokyo, JP;

Hironobu Tanigawa, Tokyo, JP;

Sadahiko Miura, Tokyo, JP;

Nobuyuki Ishiwata, Tokyo, JP;

Assignee:

NEC CORPORATION, Tokyo, JP;

Attorney:

Young & Thompson

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/02 (2006.01); B82Y 25/00 (2011.01); G11C 11/14 (2006.01); H01F 10/32 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); G11C 19/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); B82Y 25/00 (2013.01); G11C 11/14 (2013.01); G11C 11/161 (2013.01); G11C 19/0808 (2013.01); G11C 19/0841 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01); H01F 10/3295 (2013.01);
Abstract

A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

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