The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Nov. 18, 2011
Cheonhong Kim, San Diego, CA (US);
Tallis Young Chang, San Diego, CA (US);
John Hyunchul Hong, San Clemente, CA (US);
Cheonhong Kim, San Diego, CA (US);
Tallis Young Chang, San Diego, CA (US);
John Hyunchul Hong, San Clemente, CA (US);
QUALCOMM MEMS TECHNOLOGIES, INC., San Diego, CA (US);
Abstract
This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate.