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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379242 B1

PDFFull Text
Date of Patent:
Jun. 28, 2016

Filed:

May. 28, 2015

Method of fabricating fin field effect transistor

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Mon-Sen Lin, Ping-Tung County, TW;

Yu-Ping Wang, Taoyuan, TW;

Yu-Ting Tseng, Tainan, TW;

Hao-Yeh Liu, Kaohsiung, TW;

Chun-tsen Lu, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Tod T Van Roy

Assistant Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7847 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 29/1054 (2013.01);
Abstract

A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.

Find Patent Forward Citations

Lin, Mon-Sen. (2016). Method of fabricating fin field effect transistor (U.S. Patent No. 9379242). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9379242

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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