The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Nov. 10, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu Chao Lin, Hsin-Chu, TW;
Cheng-Han Wu, Hsin-Chu, TW;
Eric Chih-Fang Liu, Taipei, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first dielectric layer, and patterning the first hardmask layer to form a first hardmask portion with a first width. The method further includes forming a second dielectric layer on the first dielectric layer and the first hardmask portion, forming a third dielectric layer on the second dielectric layer, and etching the third dielectric layer and a portion of the second dielectric layer to form a first and second spacer on opposite sides of the first hardmask portion.