The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 06, 2014
Infineon Technologies Austria Ag, Villach, AT;
Ravi Joshi, Villach, AT;
Johannes Baumgartl, Riegersdorf, AT;
Martin Poelzl, Ossiach, AT;
Matthias Kuenle, Villach-Landskron, AT;
Juergen Steinbrenner, Noetsch, AT;
Andreas Haghofer, Villach, AT;
Christoph Gruber, Wenberg, AT;
Georg Ehrentraut, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings. An epitaxial layer is grown on the semiconductor substrate by an epitaxial lateral overgrowth process. The first openings are filled by the epitaxial layer and the epitaxial layer is grown onto adjacent portions of the first dielectric layer so that part of the first dielectric layer is uncovered by the epitaxial layer and a gap forms between opposing sidewalls of the epitaxial layer over the part of the first dielectric layer that is uncovered by the epitaxial layer. The gap defines a first trench in the epitaxial layer that extends to the first dielectric layer.