The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Dec. 19, 2014
Applicant:
Flosfia Inc., Kyoto-shi, Kyoto, JP;
Inventors:
Assignee:
FLOSFIA, INC., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/22 (2006.01); H01L 21/02 (2006.01); H01L 29/772 (2006.01); H01L 29/778 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 33/26 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 29/22 (2013.01); H01L 21/0242 (2013.01); H01L 21/0257 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02581 (2013.01); H01L 29/04 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7393 (2013.01); H01L 29/7722 (2013.01); H01L 29/7787 (2013.01); H01L 29/8083 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 21/02554 (2013.01); H01L 33/26 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01);
Abstract
Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.