The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 03, 2015
United Microelectronics Corporation, Hsinchu, TW;
Chun Jen Chen, Tainan, TW;
Bin-Siang Tsai, Erlin Township, TW;
Tsai-Yu Wen, Tainan, TW;
Yu Shu Lin, Pingtung, TW;
Chin-Sheng Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming germanium nanowires comprises forming a semiconductor fin structure including alternating fin and shallow trench structures, etching a top portion of the fin to form a fin recess and depositing a germanium-based semiconductor into the fin recess as a germanium-based plug. The method comprises etching the shallow trench structure to expose the germanium-based semiconductor side faces. The exposed germanium-based semiconductor undergoes annealing to form high carrier mobility nanowire structures. The nanowire structures can also be formed of different diameters by selective oxidation of some of the deposited germanium-based plugs. Alternately, forming fin structures of different widths results in deposited germanium plugs of different widths to be deposited to form different thicknesses of nanowires.