The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Apr. 28, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Atsushi Yoshida, Yokkaichi, JP;
Hiroshi Kanno, Yokkaichi, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Takamasa Okawa, Yokkaichi, JP;
Hideyuki Tabata, Yokkaichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A semiconductor memory device according to an embodiment described below comprises: first lines arranged in a first direction perpendicular to a main surface of a substrate and extending in a second direction crossing the first direction; second lines arranged in the second direction, extending in the first direction, and intersecting the first lines; memory cells disposed at intersections of the first lines and the second lines; and an interlayer insulating film provided between the second lines. The interlayer insulating film has an air gap extending continuously in the first direction so as to intersect at least some of the first lines aligned along the first direction. The interlayer insulating film also includes an insulating film positioned above the air gap and having a curved surface that protrudes toward a direction of the substrate.