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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9379042 B1

PDFFull Text
Date of Patent:
Jun. 28, 2016

Filed:

Oct. 02, 2014

Integrated circuit devices having through silicon via structures and methods of manufacturing the same

Applicants:

Jae-hwa Park, Yongin-si, KR;

Suk-chul Bang, Yongin-si, KR;

Byung-lyul Park, Seoul, KR;

Kwang-jin Moon, Hwaseong-si, KR;

Inventors:

Jae-Hwa Park, Yongin-si, KR;

Suk-Chul Bang, Yongin-si, KR;

Byung-Lyul Park, Seoul, KR;

Kwang-Jin Moon, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A.

Primary Examiner:

Benjamin Sandvik

Assistant Examiner:

Herve Assouman

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/48 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 27/10817 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10888 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 28/87 (2013.01); H01L 28/91 (2013.01); H01L 23/522 (2013.01); H01L 23/5384 (2013.01); H01L 27/10814 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered interconnection structure formed on the capacitor and the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.

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