The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 29, 2013
Applicant:
Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;
Inventors:
Shiro Ninomiya, Ehime, JP;
Tadanobu Kagawa, Ehime, JP;
Toshio Yumiyama, Ehime, JP;
Akira Funai, Ehime, JP;
Takashi Kuroda, Ehime, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01J 37/08 (2006.01); C23C 14/48 (2006.01); H01J 37/304 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); C23C 14/48 (2013.01); H01J 37/304 (2013.01); H01J 37/3171 (2013.01); H01J 2237/0206 (2013.01);
Abstract
Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.