The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
May. 01, 2015
Bum-joon Youn, Suwon-si, KR;
Tae-sun Kim, Hwaseong-si, KR;
Yeo-jin Lee, Seoul, KR;
Yu-ra Kim, Hwaseong-si, KR;
Jin-man Kim, Yongin-si, KR;
Jae-kyung Seo, Yongin-si, KR;
Ki-man Lee, Yongin-si, KR;
Bum-Joon Youn, Suwon-si, KR;
Tae-Sun Kim, Hwaseong-si, KR;
Yeo-Jin Lee, Seoul, KR;
Yu-Ra Kim, Hwaseong-si, KR;
Jin-Man Kim, Yongin-si, KR;
Jae-Kyung Seo, Yongin-si, KR;
Ki-Man Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.