The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jun. 10, 2014
International Business Machines Corporation, Armonk, NY (US);
Brown C. Peethala, Albany, NY (US);
Spyridon Skordas, Troy, NY (US);
Da Song, Loudonville, NY (US);
Allan Upham, Waterford, NY (US);
Kevin R. Winstel, East Greenbush, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×10atoms/cm; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.