The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Aug. 31, 2012
Shigeki Hattori, Kanagawa-ken, JP;
Masakazu Yamagiwa, Tokyo, JP;
Masaya Terai, Kanagawa-ken, JP;
Hideyuki Nishizawa, Tokyo, JP;
Koji Asakawa, Kanagawa-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
Shigeki Hattori, Kanagawa-ken, JP;
Masakazu Yamagiwa, Tokyo, JP;
Masaya Terai, Kanagawa-ken, JP;
Hideyuki Nishizawa, Tokyo, JP;
Koji Asakawa, Kanagawa-ken, JP;
Yoshiaki Fukuzumi, Kanagawa-ken, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.