The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Oct. 28, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Aneesh Nainani, Palo Alto, CA (US);
Bhushan N. Zope, Santa Clara, CA (US);
Leonid Dorf, San Jose, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Adam Brand, Palo Alto, CA (US);
Mathew Abraham, Mountain View, CA (US);
Subhash Deshmukh, North Andover, MA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/8238 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02063 (2013.01); H01J 37/3233 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/76814 (2013.01); H01L 21/8258 (2013.01); H01L 21/823807 (2013.01); H01L 29/66795 (2013.01); H01L 21/02661 (2013.01); H01L 21/823821 (2013.01);
Abstract
An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.