The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Feb. 20, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 5/06 (2006.01); G11C 8/14 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/56 (2013.01); G11C 13/0002 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 5/063 (2013.01); G11C 8/14 (2013.01); G11C 2213/74 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01); H01L 27/222 (2013.01); H01L 27/24 (2013.01);
Abstract
The present disclosure includes methods and apparatuses that include resistive memory. A number of embodiments include a first memory cell coupled to a data line and including a first resistive storage element and a first access device, a second memory cell coupled to the data line and including a second resistive storage element and a second access device, an isolation device formed between the first access device and the second access device, a first select line coupled to the first resistive storage element, and a second select line coupled to the second resistive storage element, wherein the second select line is separate from the first select line.