The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9373781 B1

Expired

Date of Patent:

Jun. 21, 2016

Filed:

Feb. 19, 2014

Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications

Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Xueti Tang, San Jose, CA (US);

Jang Eun Lee, Cupertino, CA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Convergent Law Group LLP

Primary Examiner:

Craig A Renner

Int. Cl.

CPC ...

H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); G11B 5/39 (2006.01);

U.S. Cl.

CPC ...

H01L 43/12 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); G11B 2005/3996 (2013.01); G11C 11/16 (2013.01); Y10T 29/49034 (2015.01);

Abstract

A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Find Patent Forward Citations

Tang, Xueti. (2016). Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications (U.S. Patent No. 9373781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9373781

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