Insulated gate bipolar transistor

Abstract

A semiconductor component is described herein. In accordance with one example of the invention, the semiconductor component includes a semiconductor body, which has a top surface and a bottom surface. A body region, which is doped with dopants of a second doping type, is arranged at the top surface of the semiconductor body. A drift region is arranged under the body region and doped with dopants of a first doping type, which is complementary to the second doping type. Thus a first pn-junction is formed at the transition between the body region and the drift region. A field stop region is arranged under the drift region and adjoins the drift region. The field stop region is doped with dopants of the same doping type as the drift region. However, the concentration of dopants in the field stop region is higher than the concentration of dopants in the drift region. At least one pair of semiconductor layers composed of a first and a second semiconductor layer are arranged in the drift region. The first semiconductor layer extends substantially parallel to the top surface of the semiconductor body and is doped with dopants of the first doping type but with a higher concentration of dopants than the drift region. The second semiconductor layer is arranged adjacent to or adjoining the first semiconductor layer and is doped with dopants of the second doping type. Furthermore, the second semiconductor layer is structured to include openings so that a vertical current path is provided through the drift region without an intervening pn-junction.