The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9373680 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 21, 2016

Filed:

Feb. 02, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ki Young Lee, Schenectady, NY (US);

Tony Joung, Watervliet, NY (US);

Sanggil Bae, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 28/40 (2013.01); H01L 27/0805 (2013.01);
Abstract

Integrated circuits with MIM capacitors and methods for producing them with metal and oxide hard masks are provided. Embodiments include disposing a dielectric layer over an ILD, the ILD including a contact therethrough in a first region; forming a capacitor trench in the dielectric layer in a second region; forming a MIM hard mask by: disposing a first metal hard mask in the first region and in the capacitor trench in the second region; disposing an oxide hard mask over the first metal hard mask; and disposing a second metal hard mask over the oxide hard mask; forming a metal line trench through the MIM hard mask in the first region, including over the contact, while masking the second region; and removing portions of the MIM hard mask in the capacitor trench, wherein a remaining portion of the first metal hard mask comprises a bottom plate of an MIM capacitor.


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