The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Sep. 20, 2013
Avalanche Technology Inc., Fremont, CA (US);
Kimihiro Satoh, Beaverton, OR (US);
Yiming Huai, Pleasanton, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The present invention is directed to a memory device having a via landing pad in the peripheral circuit that minimizes the memory cell size. A device having features of the present invention comprises a peripheral circuit region and a magnetic memory cell region including at least a magnetic tunnel junction (MTJ) element. The peripheral circuit region comprises a substrate and a bottom contact formed therein; a landing pad including a first magnetic layer structure formed on top of the bottom contact and a second magnetic layer structure separated from the first magnetic layer structure by an insulating tunnel junction layer, wherein each of the insulating tunnel junction layer and the second magnetic layer structure has an opening aligned to each other; and a via partly embedded in the landing pad and directly coupled to the first magnetic layer structure through the openings.