The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Jan. 23, 2015
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Guei Yan, Hsinchu, TW;

Chih-Chieh Cheng, Hsinchu, TW;

Wen-Jer Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/113 (2006.01); H01L 27/115 (2006.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01);
Abstract

A memory device is provided. The memory device includes a plurality of stack structures, a plurality of first stepped contacts, and a plurality of second stepped contacts. Each of the stack structures extends in a first direction, and includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is disposed above the first semiconductor layer. Each of the first stepped contacts extends in a second direction, and a bottom surface thereof is electrically connected to the first semiconductor layers of an i+1stack structure and an i+2stack structure, wherein i is an odd number. Each of the second stepped contacts extends in the second direction, and a bottom surface thereof is electrically connected to the second semiconductor layers of an nstack structure and the i+1stack structure. The first direction is different from the second direction.


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