The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Jul. 08, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Miaoli County, TW;

Chih-Shen Chang, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 2211/5622 (2013.01); G11C 2211/5648 (2013.01);
Abstract

Common problems when programming 3D NAND Flash memory having alternating page orientation include the back-pattern effect and pattern-induced program disturb. Improved programming techniques may substantially reduce these problems and, in turn, increase precision when setting memory cells' threshold voltages. Provided are exemplary techniques that combine aspects of 'by-word-line' programming and 'by-page' programming. As such, each page may be programmed beginning with the memory cells that are closest to string select structures, and memory cells on multiple even or odd pages may be programmed substantially simultaneously.


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