The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Aug. 17, 2012
Applicants:

Ki-jeong Kim, Hwaseong-si, KR;

Jae-ho Min, Yongin-si, KR;

Kyoung-sub Shin, Seongnam-si, KR;

Dong-hyun Kim, Hwaseong-si, KR;

Inventors:

Ki-jeong Kim, Hwaseong-si, KR;

Jae-ho Min, Yongin-si, KR;

Kyoung-sub Shin, Seongnam-si, KR;

Dong-hyun Kim, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/311 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 7/00 (2013.01);
Abstract

A method of forming micropatterns separated over a misalignment margin includes forming a first mold pattern including a main pattern and a separation-assist pattern, forming a first spacer mask having a first width around the first mold pattern, forming a second mold pattern using the first spacer mask as an etch mask, forming a second spacer mask having a second width around the second mold pattern, and forming a target pattern using the second spacer mask as an etch mask.


Find Patent Forward Citations

Loading…