The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jun. 14, 2012
Kei Matsumoto, Hiroshima, JP;
Ryuji Ohno, Saitama, JP;
Kei Matsumoto, Hiroshima, JP;
Ryuji Ohno, Saitama, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage Vto form a depletion layer and a weak voltage Vto trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the Vto the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.