The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Sep. 03, 2012
Tomoyuki Kinoshita, Kanagawa, JP;
Kohei Iwanaga, Kanagawa, JP;
Sachio Asano, Kanagawa, JP;
Takahiro Kawabata, Kanagawa, JP;
Noriaki Oshima, Kanagawa, JP;
Satori Hirai, Kanagawa, JP;
Yoshinori Harada, Kanagawa, JP;
Kazuyoshi Arai, Kanagawa, JP;
Ken-ichi Tada, Kanagawa, JP;
Tomoyuki Kinoshita, Kanagawa, JP;
Kohei Iwanaga, Kanagawa, JP;
Sachio Asano, Kanagawa, JP;
Takahiro Kawabata, Kanagawa, JP;
Noriaki Oshima, Kanagawa, JP;
Satori Hirai, Kanagawa, JP;
Yoshinori Harada, Kanagawa, JP;
Kazuyoshi Arai, Kanagawa, JP;
Ken-ichi Tada, Kanagawa, JP;
TOSOH CORPORATION, Shunan-shi, JP;
Sagami Chemical Research Institute, Ayase-shi, JP;
Abstract
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.