The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Mar. 02, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Katsutoshi Kobayashi, Hachiouji Tokyo, JP;
Yusuke Kasahara, Yokohama Kanagawa, JP;
Hiroki Yonemitsu, Chigasasaki Kanagawa, JP;
Hitoshi Kubota, Yokohama Kanagawa, JP;
Ayako Kawanishi, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.