The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Sep. 03, 2013
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Jiale Su, Jiangsu, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Abstract
A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S, providing a silicon substrate; S, depositing a mask layer on the silicon substrate; S, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S; and S, corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches. The mask layer having a certain thickness is reserved at the bottom portion of the window having the non-minimum width dimension, a relatively large window is protected, and a relatively small window is etched first, so that the finally obtained silicon trenches have the same depth.