The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 20, 2013
Cypress Semiconductor Corporation, San Jose, CA (US);
Shenqing Fang, Sunnyvale, CA (US);
Chun Chen, San Jose, CA (US);
David Matsumoto, San Jose, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
Semiconductor devices and methods of producing the devices are disclosed. The devices are formed by forming a gate structure on a substrate. The gate structure includes a charge trapping dielectric formed between the substrate and a first poly layer. A top dielectric is formed over the poly layer and a sidewall dielectric is formed on a side of the poly layer. A second poly layer is formed over the gate structure such that a portion of the second poly layer includes a vertical portion that is in contact with the sidewall dielectric and a top portion that is in contact with the top dielectric. The top portion of the second poly layer can then be removed through, for instance, planarization.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile