The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Mar. 27, 2014
Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Motomu Kurata, Isehara, JP;
Shinya Sasagawa, Chigasaki, JP;
Taiga Muraoka, Yamato, JP;
Hiroaki Honda, Odawara, JP;
Takashi Hamada, Atsugi, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode.