The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 04, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/76224 (2013.01); H01L 29/66795 (2013.01); H01L 29/7853 (2013.01);
Abstract
A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a top surface of the at least one fin, a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin, and a strained layer formed at least on a top surface of the at least one gate stack, wherein the strained layer is configured to provide a strain force to the at least one gate stack.