The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Sep. 15, 2014
Macronix International Co., Ltd., Hsinchu, TW;
Wing-Chor Chan, Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure comprising an improved ESD protection device is provided. The semiconductor structure comprises a substrate, a well formed in the substrate, a first heavily doped region formed in the well, a second heavily doped region formed in the well and separated apart from the first heavily doped region, a gate structure formed on the substrate between the first heavily doped region and the second heavily doped region, a field region formed in the well under the first heavily doped region and the gate structure, and a field oxide/shallow trench isolation structure formed adjacent to the first heavily doped region. The field region is not formed under the second heavily doped region. The well and the field region have a first type of doping. The first heavily doped region and the second heavily doped region have a second type of doping.