The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Aug. 02, 2012
Kai Huang, Jiangsu, CN;
Peng Du, Jiangsu, CN;
Jianxiang Cai, Jiangsu, CN;
Tsung-nten Hsu, Jiangsu, CN;
Kai Huang, Jiangsu, CN;
Peng Du, Jiangsu, CN;
Jianxiang Cai, Jiangsu, CN;
Tsung-nten Hsu, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A read-only memory includes a plurality of storage units arranged in an array. The read-only memory includes two kinds of storage units with different structures, the two kinds of storage units with different structures are a first MOS transistor and a second MOS transistor. A source and a drain of the first MOS transistor have the same type, a source and a drain of the second MOS transistor have inverse type. These two kinds of MOS transistors can be used to store binary 0 and 1 respectively. In the manufacturing method of the read-only memory, the same type of drain and source can be manufactured simultaneously, no extra mask plate is needed, so the extra mask plate of a conventional read-only memory can be saved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile