The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jul. 08, 2014
Globalfoundries Inc., Grand Cayman, KY;
Emre Alptekin, Wappingers Falls, NY (US);
Viraj Yashawant Sardesai, Poughkeepsie, NY (US);
Cung Do Tran, Newburgh, NY (US);
Reinaldo Ariel Vega, Wappingers Falls, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and covers the graphene layer, while an upper portion of the fins protrudes from the shallow trench isolation region. The graphene layer may also be deposited on a top surface of the base semiconductor substrate. The graphene serves to conduct heat away from the fins more effectively than other dielectric materials.