The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Apr. 10, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wei-Min Tseng, New Taipei, TW;
Shih-Guo Shen, New Taipei, TW;
Chien-Chung Wang, New Taipei, TW;
Huey-Chi Chu, Hsin-Chu, TW;
Wen-Chuan Chiang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a MIM (metal-insulator-metal) capacitor, and an associated method of formation. In some embodiments, the MIM capacitor includes a first electrode having a capacitor bottom metal layer disposed over a dielectric buffer layer located over an under-metal layer. A capacitor dielectric layer is disposed onto and in direct contact with the capacitor bottom metal layer. A second electrode having a top capacitor metal layer is disposed onto and in direct contact with the capacitor dielectric layer. A capacitor inter-level dielectric (ILD) layer is disposed over the top capacitor metal layer, and a substantially planar etch stop layer disposed over the capacitor ILD layer. The capacitor's simple stack provides for a small step size that prevents topography related issues, while the dielectric buffer layer removes design restrictions on the lower metal layer.