The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Jan. 24, 2014
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Sander Frederik Wuister, Eindhoven, NL;

Tamara Druzhinina, Eindhoven, NL;

Mircea Dusa, Campbell, CA (US);

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/308 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); G03F 1/50 (2012.01); G03F 1/80 (2012.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); B82Y 10/00 (2013.01); G03F 1/50 (2013.01); G03F 1/80 (2013.01); G03F 7/0002 (2013.01); H01L 21/0271 (2013.01); H01L 21/0337 (2013.01); H01L 29/0673 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01);
Abstract

A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.


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