The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 10, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Seung Park, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NHand NFto form a stream of plasma products, controlling a flow of un-activated NHthat is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NHuntil the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH.