The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jan. 02, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Masahiro Wada, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
To improve the reliability of a semiconductor device. In particular, the reading of incorrect information from a memory cell is suppressed. A first low-concentration region is formed in a well, and is located under a side wall insulating film in a planar view. The first low-concentration region has a second conductivity type, and the second conductivity-type impurity concentration is lower than the impurity concentration in a drain. A second low-concentration region is formed in the well, and is located under a spacer insulating film in a planar view. In addition, a second conductivity type impurity concentration in the second low-concentration region is lower than the second conductivity-type impurity concentration in the first low-concentration region, and is higher than the second conductivity-type impurity concentration in a portion located under the insulating film of the well.