The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Mar. 11, 2015
Intel Corporation, Santa Clara, CA (US);
Donald S. Gardner, Mountain View, CA (US);
Eric C. Hannah, Pebble Beach, CA (US);
Rong Chen, Sunnyvale, CA (US);
John Gustafson, Pleasanton, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
In one embodiment a charge storage device includes first () and second () electrically conductive structures separated from each other by a separator (). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (). Each one of the channels has an opening () to a surface () of the porous structure. In another embodiment the charge storage device includes multiple nanostructures () and an electrolyte () in physical contact with at least some of the nanostructures. A material () having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.