The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 18, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Zailong Bian, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01C 1/02 (2006.01); H01C 7/13 (2006.01); H01C 17/06 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01C 1/02 (2013.01); H01C 7/13 (2013.01); H01C 17/06 (2013.01); Y10T 29/49099 (2015.01);
Abstract
Methods, devices, and systems associated with resistance variable memory device structures can include a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.