The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Jul. 21, 2010
Jiwoong Park, Ithaca, NY (US);
Carlos Ruiz-vargas, Ithaca, NY (US);
Mark Philip Levendorf, Chesterland, OH (US);
Lola Brown, Ithaca, NY (US);
Jiwoong Park, Ithaca, NY (US);
Carlos Ruiz-Vargas, Ithaca, NY (US);
Mark Philip Levendorf, Chesterland, OH (US);
Lola Brown, Ithaca, NY (US);
CORNELL UNIVERSITY, Ithaca, NY (US);
Abstract
A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.