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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362318 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Feb. 27, 2015

Method of manufacturing a semiconductor device

Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Kishou Kaneko, Kanagawa, JP;

Naoya Inoue, Kanagawa, JP;

Yoshihiro Hayashi, Kanagawa, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;

Attorney:

Young & Thompson

Primary Examiner:

Tran Tran

Assistant Examiner:

Trang Tran

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 23/522 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/465 (2006.01); H01L 21/4763 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02565 (2013.01); H01L 21/28 (2013.01); H01L 21/44 (2013.01); H01L 21/465 (2013.01); H01L 21/47635 (2013.01); H01L 23/522 (2013.01); H01L 27/088 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/1251 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); H01L 29/66477 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An interlayer insulating film is formed. Then a first gate electrode and a second gate electrode are buried in the interlayer insulating film. Then, an anti-diffusion film is formed over the interlayer insulating film, over the first gate electrode, and over the second gate electrode. Then, a first semiconductor layer is formed over the anti-diffusion film which is present over the first gate electrode. Then, an insulating cover film is formed over the upper surface and on the lateral side of the first semiconductor layer and over the anti-diffusion film. Then, a semiconductor film is formed over the insulating cover film. Then, the semiconductor film is removed selectively to leave a portion positioned over the second gate electrode, thereby forming a second semiconductor layer.

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