The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Oct. 28, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 27/01 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76816 (2013.01); H01L 21/76829 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/53295 (2013.01); H01L 27/016 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal-insulator-metal (MIM) capacitor formed on a substrate. The semiconductor device structure also includes an inductor formed on the MIM capacitor. The semiconductor device structure further includes a via formed between the MIM capacitor and the inductor, and the via is formed in a plurality of dielectric layers, and the dielectric layers comprise an etch stop layer.