The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Nov. 19, 2009
Applicants:

Thorbjörn Ebefors, Huddinge, SE;

Edvard Kälvesten, Hägersten, SE;

Tomas Bauer, Kristinetorpsvägen, SE;

Inventors:

Thorbjörn Ebefors, Huddinge, SE;

Edvard Kälvesten, Hägersten, SE;

Tomas Bauer, Kristinetorpsvägen, SE;

Assignee:

Silex Microsystems AB, Jarfalla, SE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/60 (2006.01); H01L 21/50 (2006.01); B81B 7/00 (2006.01); H01L 21/683 (2006.01); H01L 23/552 (2006.01); H01L 23/58 (2006.01); H01L 23/64 (2006.01); H01L 23/66 (2006.01); H01L 23/04 (2006.01); H01L 23/48 (2006.01); H01L 21/78 (2006.01); H01L 23/10 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); B81B 7/007 (2013.01); H01L 21/6835 (2013.01); H01L 23/552 (2013.01); H01L 23/585 (2013.01); H01L 23/642 (2013.01); H01L 23/645 (2013.01); H01L 23/66 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); B81B 2207/095 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/10 (2013.01); H01L 23/481 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6622 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/29009 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/29012 (2013.01); H01L 2224/29018 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/3012 (2013.01); H01L 2224/30051 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/83805 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.


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