The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 07, 2014
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Yuan-Hsiang Chang, Hsinchu, TW;
Yi-Shan Chiu, Taoyuan County, TW;
Zhen Chen, Singapore, SG;
Wei Ta, Singapore, SG;
Wei-Chang Liu, Singapore, SG;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 27/11563 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.