The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Sep. 30, 2014
Applied Materials, Inc., Santa Clara, CA (US);
Kiran V. Thadani, Sunnyvale, CA (US);
Abhijit Basu Mallick, Fremont, CA (US);
Sanjay Kamath, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.