The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Dec. 30, 2014
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yoke Weng Tam, Singapore, SG;

Zhiqi Huang, Singapore, SG;

Bai Yen Nguyen, Singapore, SG;

Benjamin Shui Chor Lau, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 7/06 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/062 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 11/5642 (2013.01);
Abstract

A semiconductor device for storing data includes a memory cell. The memory cell comprises a plurality of transistors. A trimmable sense amplifier is electrically connected to the memory cell. The trimmable sense amplifier is configured to provide variable current to said memory cell. A charge pump is also electrically connected to the memory cell. The charge pump includes a plurality of diodes disposed in series with one another. The charge pump includes an input for receiving an input voltage and an output for providing an output voltage greater than the input voltage to the memory cell.


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