The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Apr. 10, 2015
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Yong-Kyu Lee, Hwaseong-Si, KR;
Dae-Seok Byeon, Seongnam-Si, KR;
Yeong-Taek Lee, Seoul, KR;
Chi-Weon Yoon, Seoul, KR;
Hyun-Kook Park, Anyang-Si, KR;
Hyo-Jin Kwon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of operating a memory device includes determining a value of an operating current flowing through a selected first signal line, to which a selection voltage is applied, from among a plurality of first signal lines; dividing an array of memory cells into n blocks, n being an integer greater than 1, based on the value of the operating current; and applying inhibit voltages having different voltage levels corresponding to the n blocks to unselected ones of second signal lines included in the n blocks. Each of the unselected second signal lines is a pathway through which leakage current may potentially flow due to the operating current flowing through the selected first signal line and a memory cell addressed by the unselected second signal line and the selected first signal line.