The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jun. 07, 2013
Win Semiconductors Corp., Tao Yuan Shien, TW;
Shu-Hsiao Tsai, Tao Yuan Shien, TW;
Hsiu-Chen Chang, Tao Yuan Shien, TW;
Shinichiro Takatani, Tao Yuan Shien, TW;
Cheng-Kuo Lin, Tao Yuan Shien, TW;
WIN SEMICONDUCTORS CORP., Tao Yuan Shien, TW;
Abstract
A layout structure of HBTs comprising one or more HBTs, each of which comprises a base electrode, an emitter electrode, and a collector electrode. A passive layer, a first dielectric layer, a collector redistribution layers, one or more emitter copper pillars, and one or more collector copper pillars are formed above the one or more HBTs. The passive layer comprises a collector and an emitter pads. The first dielectric layer has one or more emitter and collector via holes. The emitter copper pillar is disposed on the emitter via hole and forms an electrical connection to the emitter electrode. The collector copper pillar is disposed on the collector redistribution layer and forms electrical connection to the collector electrode. The layout design of the emitter and collector copper pillars is therefore flexible, and the heat dissipation efficiency is improved.