The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jul. 28, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park,Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/31 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02107 (2013.01); H01L 21/31 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01);
Abstract
A manufacturing method of a semiconductor structure includes the following steps. A high-k dielectric layer is formed on a semiconductor substrate, and a barrier layer is formed on the high-k dielectric layer. An oxygen annealing treatment is performed after the step of forming the barrier layer; and a capping layer is formed on the barrier layer after the oxygen annealing treatment.