The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Feb. 24, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventor:

Zhiyuan Cheng, Lincoln, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/32 (2006.01); H01L 21/8252 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/267 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/8252 (2013.01); H01L 21/8258 (2013.01); H01L 27/0605 (2013.01); H01L 29/04 (2013.01); H01L 29/0607 (2013.01); H01L 29/0649 (2013.01); H01L 29/267 (2013.01); H01L 29/66462 (2013.01); H01L 21/0237 (2013.01);
Abstract

A device includes a crystalline material within an area confined by an insulator. In one embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique. Method and apparatus embodiments of the invention can reduce edge effects in semiconductor devices. Embodiments of the invention can provide a planar surface over a buffer layer between a plurality of uncoalesced ART structures.


Find Patent Forward Citations

Cheng, Zhiyuan. (2016). Reduction of edge effects from aspect ratio trapping (U.S. Patent No. 9356103). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9356103

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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